A 53-nW 9.1-ENOB 1-kS/s SAR ADC in 0.13-$mu$m CMOS for Medical Implant Devices

摘要

This paper describes an ultra-low power SAR ADC for medical implant devices. To achieve the nano-watt range power consumption, an ultra-low power design strategy has been utilized, imposing maximum simplicity on the ADC architecture, low transistor count and matched capacitive DAC with a switching scheme which results in full-range sampling without switch bootstrapping and extra reset voltage. Furthermore, a dual-supply voltage scheme allows the SAR logic to operate at 0.4 V, reducing the overall power consumption of the ADC by 15% without any loss in performance. The ADC was fabricated in 0.13-$mu$m CMOS. In dual-supply mode (1.0 V for analog and 0.4 V for digital), the ADC consumes 53 nW at a sampling rate of 1 kS/s and achieves the ENOB of 9.1 bits. The leakage power constitutes 25% of the 53-nW total power.