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Low-Power, Minimally Invasive Process Compensation Technique for Sub-Micron CMOS Amplifiers

机译:亚微米CMOS放大器的低功耗,微创工艺补偿技术

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Process variation is an obstacle in designing reliable CMOS mixed signal systems with high yield. To minimize the variation in voltage gain due to variations in process, supply voltage, and temperature for common transconductance-based amplifiers, we present a new compensation method based on statistical feedback of process information. We develop the background theory of the scheme and present its performance across process corners. We further apply our scheme to two well known amplifier topologies in the TSMC 65 nm CMOS process as design examples—an inductive degenerated low-noise amplifier (LNA) and a common source amplifier (CSA). Measured results over 100 chips of the LNA show that our compensation technique reduces variation in gain by a factor of $3.7times$ compared to the baseline case. The CSA exhibits similar reductions in gain variation across 88 measured chips. We also present measured results demonstrating how our technique alleviates voltage gain variations caused by temperature and supply voltage changes.
机译:工艺变化是设计高产量可靠的CMOS混合信号系统的障碍。为了使基于跨导的普通放大器的过程,电源电压和温度变化引起的电压增益变化最小,我们提出了一种基于过程信息统计反馈的新补偿方法。我们开发了该方案的背景理论,并介绍了各个过程的性能。我们将我们的方案进一步应用到台积电65 nm CMOS工艺中的两个众所周知的放大器拓扑中,作为设计示例-电感性退化低噪声放大器(LNA)和共源放大器(CSA)。超过100个LNA芯片的测量结果表明,与基线情况相比,我们的补偿技术将增益变化降低了3.7倍。 CSA在88个被测芯片上表现出相似的增益变化降低。我们还提供了测量结果,证明了我们的技术如何缓解由温度和电源电压变化引起的电压增益变化。

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