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Performance Analysis of a Low-Power High-Speed Hybrid 1-bit Full Adder Circuit

机译:低功耗高速混合1位全加法器电路的性能分析

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In this paper, a hybrid 1-bit full adder design employing both complementary metal–oxide–semiconductor (CMOS) logic and transmission gate logic is reported. The design was first implemented for 1 bit and then extended for 32 bit also. The circuit was implemented using Cadence Virtuoso tools in 180-and 90-nm technology. Performance parameters such as power, delay, and layout area were compared with the existing designs such as complementary pass-transistor logic, transmission gate adder, transmission function adder, hybrid pass-logic with static CMOS output drive full adder, and so on. For 1.8-V supply at 180-nm technology, the average power consumption (4.1563 W) was found to be extremely low with moderately low delay (224 ps) resulting from the deliberate incorporation of very weak CMOS inverters coupled with strong transmission gates. Corresponding values of the same were 1.17664 W and 91.3 ps at 90-nm technology operating at 1.2-V supply voltage. The design was further extended for implementing 32-bit full adder also, and was found to be working efficiently with only 5.578-ns (2.45-ns) delay and 112.79-W (53.36-W) power at 180-nm (90-nm) technology for 1.8-V (1.2-V) supply voltage. In comparison with the existing full adder designs, the present implementation was found to offer significant improvement in terms of power and speed.
机译:在本文中,报告了一种采用互补金属氧化物半导体(CMOS)逻辑和传输门逻辑的混合1位全加法器设计。该设计首先实现了1位,然后又扩展了32位。该电路是使用Cadence Virtuoso工具以180和90 nm技术实现的。将性能参数(例如功率,延迟和布局面积)与现有设计进行了比较,例如互补的传输晶体管逻辑,传输门加法器,传输功能加法器,具有静态CMOS输出驱动器全加法器的混合传输逻辑等。对于采用180 nm技术的1.8 V电源,由于故意合并非常弱的CMOS反相器和强大的传输门,导致平均功耗(4.1563 W)极低,且延迟适度较低(224 ps)。在90-nm技术下,在1.2V电源电压下,其对应值分别为1.17664 W和91.3 ps。该设计进一步扩展以实现32位全加法器,并且发现该设计可以高效地工作,并且在180-nm(90-nm)处只有5.578-ns(2.45-ns)的延迟和112.79-W(53.36-W)的功率)技术以提供1.8V(1.2V)的电源电压。与现有的完整加法器设计相比,发现本实施方式在功率和速度方面提供了显着的改进。

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