True-Damage-Aware Enumerative Coding for Improving nand Flash Memory Endurance

摘要

This brief presents a technique that can fully exploit the data dependency of flash memory cell damage to improve the program/erase (P/E) cycling endurance of flash memory. The key is to opportunistically leverage data lossless compressibility and utilize the compression gain to realize memory-damage-aware data manipulation to reduce the cycling-induced physical damage. Based upon experiments using commercial sub-22-nm MLC flash memory chips, we show that the proposed design technique can improve the P/E cycling endurance by 50%. We further carried out application-specific integrated circuit design to demonstrate the practical feasibility for implementing the proposed design technique.