Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea;
Random access memory; Threshold voltage; Equalizers; MOS devices; Memory management; Parallel processing; Very large scale integration;
机译:低功耗,快速计算的DRAM内按位处理电路
机译:?1/2中初始数据的3D Navier-Stokes方程的解:?1中初始数据的有界集的正则性的稳健性和正则性的数值验证
机译:具有小初始数据的爱因斯坦真空方程的全局特征问题:(I)初始数据受约束
机译:RowClone:快速高效的DRAM内大容量数据复制和初始化
机译:拉格朗日数据同化的发展和耦合数据同化支持地球系统模型初始化
机译:用于低延迟和低功耗3D堆叠DRAM的DRAM中缓存管理
机译:H?1/2中初始数据的3D Navier-Stokes方程的解:H?1中初始数据的有界集的正则性的稳健性和正则性的数值验证