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In-DRAM bitwise processing circuit for low-power and fast computation

机译:低功耗,快速计算的DRAM内按位处理电路

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摘要

In-DRAM processing circuit is able to reduce operation time and power consumption than the traditional CPU + MEMORY system in performing the complicated computation such as convolution. These benefits are gained by bitwise and parallel processing of the in-DRAM convolution circuit. To realise the in-DRAM circuit, an inter-bank processing circuit is proposed with bitwise summation/comparison circuit for performing convolution inside DRAM. Compared to the intra-bank bitwise operation, the inter-bank circuit can significantly reduce the power consumption and the number of row activation cycles to accomplish convolution. For the number of cycles, the inter-bank circuit takes only 65 cycles for calculating 16 × 16 feature map. On the contrary, the intra-bank needs as many as 192 cycles. In terms of power consumption, the inter-bank circuit consumes smaller power by 35% than the intra-bank. In the proposed in-DRAM processing circuit, no complicated multiplier and adder are needed in performing the convolution. The Modified National Institute of Standards and Technology (MNIST) recognition rate of the proposed bitwise processing circuit can be as high as 97.28%, indicating very little loss due to the ternary kernels.
机译:与传统的CPU + MEMORY系统相比,In-DRAM处理电路在执行诸如卷积之类的复杂计算时,可以减少运算时间和功耗。通过对DRAM内卷积电路进行按位和并行处理可以获得这些好处。为了实现DRAM内电路,提出了一种具有逐位求和/比较电路的库间处理电路,用于在DRAM内部进行卷积。与组内按位操作相比,组间电路可以显着减少功耗和行激活周期数以完成卷积。对于周期数,银行间电路仅需65个周期即可计算出16×16特征图。相反,银行间需要多达192个周期。就功耗而言,组间电路比组内电路消耗的功率少35%。在提出的DRAM内处理电路中,执行卷积不需要复杂的乘法器和加法器。提议的按位处理电路的修改后的美国国家标准技术研究院(MNIST)识别率可以高达97.28%,这表明由于三元内核而造成的损失很小。

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