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Energy and Lifetime Optimizations for Dark Silicon Manycore Microprocessor Considering Both Hard and Soft Errors

机译:同时考虑硬错误和软错误的暗硅Manycore微处理器的能量和寿命优化

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In this paper, we propose a new energy and lifetime optimization techniques for emerging dark silicon manycore microprocessors considering both hard long-term reliability effects (hard errors) and transient soft errors, which have been studied less in the past. We consider a recently proposed physics-based electromigration (EM) reliability model to predict the EM-induced reliability. We employ both dynamic voltage and frequency scaling (DVFS) and dark silicon core state using ON/OFF switching action as the two control knobs. We show that on-chip power consumption has different (even contradicting) impacts on soft and hard reliability effects. This paper also shows that soft error should be mitigated by other techniques if aggressive low power and high long-term reliability are pursued. We focus on two optimization techniques for improving lifetime and reducing energy. To optimize EM-induced lifetime, we first apply the adaptive Q-learning-based method, which is suitable for dynamic runtime operation as it can provide cost-effective yet good solutions. The second lifetime optimization approach is the mixed-integer linear programming (MILP) method, which typically yields better solutions but at higher computational costs. To optimize the energy of a dark silicon chip subject to the both hard and soft reliability effects, power budgets, and performance limits, the Q-learning method has been applied as well. A large class of multithreaded applications is used as our benchmarks to validate and compare the proposed dynamic reliability management methods. Experimental results on a 64-core dark silicon chip show that the proposed DRM algorithm can effectively manage and optimize the lifetime of a dark silicon microprocessor under the given power budget and performance limit. Also, the proposed energy optimization can effectively manage and optimize energy consumption subject to both hard and soft-error rates, power budget, and performance limits as constraints. We also show that the under tightened power and performance constraints, we cannot satisfy both hard and soft errors at the same time as there is no simple tradeoff between performance/power and reliability in this case. Some other soft-error mitigation techniques are required in this case.
机译:在本文中,我们针对新兴的暗硅多核微处理器提出了一种新的能量和寿命优化技术,该技术同时考虑了长期的硬可靠性影响(硬错误)和瞬态软错误,而在过去对此进行了较少的研究。我们考虑了最近提出的基于物理的电迁移(EM)可靠性模型来预测EM引起的可靠性。我们使用动态电压和频率缩放(DVFS)以及暗硅芯状态(使用ON / OFF开关动作作为两个控制旋钮)。我们表明,片上功耗对软性和硬性可靠性影响有不同的(甚至是矛盾的)影响。本文还表明,如果追求积极的低功耗和高长期可靠性,则可以通过其他技术来减轻软错误。我们专注于两种优化技术,以提高使用寿命和降低能耗。为了优化由EM引起的寿命,我们首先应用基于Q学习的自适应方法,该方法适用于动态运行时操作,因为它可以提供经济高效的解决方案。第二种寿命优化方法是混合整数线性规划(MILP)方法,该方法通常会产生更好的解决方案,但计算成本较高。为了优化受硬性和软性可靠性影响,功率预算和性能限制影响的深色硅芯片的能量,还采用了Q学习方法。大量的多线程应用程序用作我们的基准,以验证和比较建议的动态可靠性管理方法。在64核深色硅芯片上的实验结果表明,在给定的功率预算和性能限制下,提出的DRM算法可以有效地管理和优化深色硅微处理器的寿命。而且,所提出的能量优化可以在硬错误率和软错误率,功率预算以及性能限制的约束下有效地管理和优化能耗。我们还表明,在功率和性能约束日益严格的情况下,我们无法同时满足硬错误和软错误,因为在这种情况下,性能/功率与可靠性之间没有简单的权衡。在这种情况下,还需要其他一些软错误缓解技术。

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