首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >A 50-mA 99.2% Peak Current Efficiency, 250-ns Settling Time Digital Low-Dropout Regulator With Transient Enhanced PI Controller
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A 50-mA 99.2% Peak Current Efficiency, 250-ns Settling Time Digital Low-Dropout Regulator With Transient Enhanced PI Controller

机译:具有瞬态增强型PI控制器的50mA 99.2%峰值电流效率,250ns建立时间数字低压降稳压器

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A fully integrated digital low-dropout regulator (DLDO) with a fast transient response, providing a regulated supply for system-on-chip (SoC) power management applications is proposed. Wideband operation and fast transient response are achieved through a transient enhanced proportional-integral controller, without compromising the stability of the DLDO at steady-state operation. The transient enhancement stage boosts loop-gain dynamically during load transients. In the gain boosting mode, the DLDO closed-loop bandwidth is increased, resulting in reduced undershoot/overshoot and fast settling. When the output voltage recovers to the desired level, the boost mode operation is disabled. For a load change with a 4-mAs slew rate between 10 and 50 mA, utilizing transient enhancement mode reduced the measured undershoot and overshoot by 35% and 17%, respectively. The characterization results show that the transient enhancement mode can reduce the settling time from 500 to 250 ns for a 10-50-mA load current change. The proposed DLDO operates with an input voltage ranging from 0.84 to 1.24 V, and output voltage ranging from 0.6 to 1 V. The maximum output current of the DLDO is 50 mA and the DLDO achieves a peak current efficiency of 99.2%, with DLDO figure of merit (FOM) of 63.25 ps. The DLDO prototype chip is fabricated on a 0.13-μm CMOS technology and occupies a 0.0631-mm die area.
机译:提出了一种具有快速瞬态响应的全集成数字低压降稳压器(DLDO),可为片上系统(SoC)电源管理应用提供稳压电源。宽带运行和快速瞬态响应是通过瞬态增强比例积分控制器实现的,而不会损害DLDO在稳态工作时的稳定性。瞬态增强级在负载瞬态期间动态地提高环路增益。在增益提升模式下,DLDO闭环带宽增加,从而降低了下冲/过冲和快速建立。当输出电压恢复到所需水平时,升压模式操作将被禁用。对于4 mA / ns压摆率介于10和50 mA之间的负载变化,采用瞬态增强模式可将测得的下冲和过冲分别减少35%和17%。表征结果表明,对于10-50 mA的负载电流变化,瞬态增强模式可以将建立时间从500 ns缩短至250 ns。拟议的DLDO的输入电压范围为0.84至1.24 V,输出电压范围为0.6至1V。DLDO的最大输出电流为50 mA,并且DLDO的峰值电流效率为99.2%。品质因数(FOM)为63.25 ps。 DLDO原型芯片是在0.13μmCMOS技术上制造的,占据了0.0631mm的管芯面积。

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