机译:具有自适应带宽PLL的10 Gbit / s / pin DFE-Less图形DRAM接口,可避免噪声干扰和CIJ降低技术
Department of Electronics and Electrical Engineering, Korea University, Seoul, South Korea;
SK Hynix semiconductor Inc., Icheon, South Korea;
Department of Electronics and Electrical Engineering, Korea University, Seoul, South Korea;
Department of Electronics and Electrical Engineering, Korea University, Seoul, South Korea;
Clocks; Random access memory; Phase locked loops; Jitter; Bandwidth; Delays; Graphics;
机译:具有低功耗和低噪声数据总线反转功能的80 nm 4 Gb / s / pin 32位512 Mb GDDR4图形DRAM
机译:降低基于RSOA的2.5和10 Gbit / s WDM-PON中的反向散射噪声
机译:用于基于PLL的高分辨率传感器接口的数字域斩波技术
机译:自适应带宽PLL,可避免噪声干扰和对10Gb / s / pin图形DRAM接口的无DFE的快速预充电采样
机译:基于SVD的时变磁场NMR测量中的干扰消除和降噪技术
机译:基于sVD的时间依赖磁场核磁共振测量中的干扰消除和降噪技术