A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations

摘要

This paper presents a half-select disturb-free 11T static random access memory (SRAM) cell for ultralow-voltage operations. The proposed SRAM cell is well suited for bit-interleaving architecture, which helps to improve the soft-error immunity with error correction coding. The read static noise margin (RSNM) and the write margin (WM) are significantly improved due to its built-in write/read-assist scheme. The experimental results in a 40-nm standard CMOS technology indicate that at a 0.5-V supply voltage, RSNM of the proposed SRAM cell is 19.8x and 0.96x as that of 6T and 8T SRAM cells with min-area, respectively. It achieves 11.84x and 9.56x higher WM correspondingly. As a result, a lower minimum operation voltage is obtained. In addition, its leakage power consumption is reduced by 53.3% and 44.5% when compared with 6T and 8T SRAM cell with min-area, respectively.