首页> 外文期刊>IEEE transactions on very large scale integration (VLSI) systems >A Physics-Based Variability-Aware Methodology to Estimate Critical Charge for Near-Threshold Voltage Latches
【24h】

A Physics-Based Variability-Aware Methodology to Estimate Critical Charge for Near-Threshold Voltage Latches

机译:一种基于物理的可变性感知方法来估算近阈值电压锁存器的临界电荷

获取原文
获取原文并翻译 | 示例
       

摘要

Near-threshold voltage (NTV) digital VLSI circuits, though important, have their sequential elements vulnerable to soft errors. The critical charge for a single event upset for a D-latch depends on its fan-out load, supply voltage, and transistor level pa
机译:接近阈值电压(NTV)的数字VLSI电路虽然很重要,但其顺序元件容易受到软错误的影响。 D锁存器单事件故障的临界电荷取决于其扇出负载,电源电压和晶体管电平pa

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号