Oxygen Recombination Coefficient on Catalytic Surfaces in Ar-O_2 Inductively Coupled Plasma by Actinometry

摘要

Atomic oxygen wall recombination coefficients at a high-temperature regime, more than 1300 K, and in a low static pressure environment are measured using the actinometric method for SiC, highly catalytic and SiO_2 materials. For this purpose, the inductively coupled plasma of O_2 with argon, as an actinometer, is employed. Measured values are compared with the numerical prediction obtained using the Kurotaki model. Agreement with the Kurotaki model is reasonable at least qualitatively.