Structure and optical parameters of Eu doped tellurium oxide thin films prepared by reactive magnetron sputtering method

摘要

In this work the structural properties and photoluminescence of tellurium dioxide thin films doped by europium were described. Thin films were deposited by magnetron sputtering method and simultaneously heated at 200 degrees C. Presence of Eu ions and their valence states was confirmed by X-ray photoemission spectroscopy measurements. The structure of the films as well as the influence of europium dopant on crystalline structure of the films was examined by X-ray diffraction method. Morphology of the samples was observed by atomic force microscope. Doping by europium didn't change structural parameters. Optical measurements showed photoluminescence from Eu2+ and Eu3+ ions. However, in the spectrum there is no line corresponding to D-5(0) -> F-7(2) transition due to an electric-dipole transition, usually present in amorphous surrounding.