Analysis of the Effect of Electron Concentration on Amplification in Semiconductor Lasers

摘要

Development of modern fiber-optical communication systems is impossible without improving design and optimizing semiconductor laser parameters. An effective method for constructing radioelectronic elements and systems is computer modeling that allows one to diminish greatly the development time and price. To model the dynamic characteristics of semiconductor lasers, velocity equations are used as a basis. One of the main parameters is the optical amplification that is defined by the linear coefficient of optical amplification g = g_o(N-N_th), where g_o is the differential amplification factor, N is the electron density, and N_th is the threshold electron density [1, 2].