Extreme Ultraviolet Interferometric Lithography: A Path to Nanopatterning

摘要

The semiconductor industry continues in its relentless march to miniaturization [1]. Every four years or so, the dimensions of the features on an integrated circuit are halved, yielding an increase in density and functionality of the electronic “chip.” The economic advantages of more devices per unit area outweigh increases in fabrication costs and performance limitations, pushing the industry to seek ever-smaller patterns. At the time of writing (April 2008) advanced devices are patterned with the smallest features hovering around 45 nm, and the next generation of ∼32 nm devices is on the horizon. What is perhaps most remarkable is that this level of nanopatterning is achieved with optical imaging tools and processes that use an actinic wavelength of 193 nm, the ArF laser emission line. As taught in any elementary physics textbook, the wavelength of light ultimately limits the achievable optical resolution [2]. So how can we pattern 32 nm features using 193 nm radiation?