Low energy electron microscopy of indium on Si(001) surfaces

摘要

Low energy electron microscopy is used to study the behavior of thin indium films on Si(001) surfaces from 100 ℃ up to 700 ℃. For temperatures below 150 ℃ we see inversions in the LEEM dark-field image and LEED 1/2-order spot intensities as indium coverage increases from 0 to 2 ML. For temperatures between 150 and 600 ℃ we find the formation of a disordered and an ordered (4 x 3) indium phase on the surface. For temperatures above 500 ℃ we observe significant rearrangement of the Si(001) surface due to the presence of indium and etching of the Si(001) surface by indium at temperatures greater than 650 ℃.