Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures

摘要

An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R₁R₂InL wherein: R₁ and R₂ may be same or different and are independently selected from C₆-C₁₀ aryl, C₆-C₁₀ fluoroaryl, C₆-C₁₀ perfluoroaryl, C₁-C₆ alkyl, C₁-C₆ fluoroalkyl, or C₁-C₆ perfluoroalkyl; and L is -diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.