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Measurement of the surface excitation probability of medium energy electrons reflected from Si, Ni, Ge and Ag surfaces

机译:从Si,Ni,Ge和Ag表面反射的中能电子的表面激发概率的测量

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Reflection electron energy loss spectra (REELS) are presented for medium energy (200 eV to 5 keV) electrons back-scattered from Si, Ni, Ge and Ag surfaces. Multiple bulk inelastic scattering is eliminated from the experimental spectra and the differential surface excitation probability is retrieved from the resulting spectra. The differential as well as the integral surface excitation probabilities are compared with available theoretical results and experimental data published earlier. A material parameter is derived from the measurements that describes the dependence of the average number of surface excitations experienced in a single surface crossing on the electron energy and direction of surface crossing. While the shape of the distribution of energy losses in a single surface excitation is in reasonable agreement with theory, the integral surface excitation probability, i.e. the number of surface excitations experienced by the probing electron during a single surface crossing, exhibits a significant scatter when comparing results from different sources.
机译:给出了从Si,Ni,Ge和Ag表面反向散射的中能(200 eV至5 keV)电子的反射电子能量损失谱(REELS)。从实验光谱中消除了多次本体非弹性散射,并从所得光谱中获得了不同的表面激发概率。将微分以及整体表面激发概率与可用的理论结果和较早发表的实验数据进行了比较。从测量得出材料参数,该参数描述了单个表面交叉中经历的平均表面激发数与电子能量和表面交叉方向之间的关系。尽管单个表面激发中能量损失的分布形状与理论合理吻合,但是当进行比较时,积分表面激发概率(即探测电子在单个表面穿越过程中经历的表面激发的数量)表现出显着的散射来自不同来源的结果。

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