机译:通过分子束外延在Si(111)衬底上生长拓扑晶体绝缘子SnTe薄膜
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China,Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China;
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
Topological crystalline insulator; Electronic structure; Molecular beam epitaxy; Scanning tunneling microscopy; Angle-resolved photoemission spectroscopy;
机译:通过分子束外延在(111)BaF_2衬底上生长的Bi_2Te_3拓扑绝缘体薄膜的结构特性
机译:拓扑晶体绝缘子SnTe(111)薄膜中与厚度和电场有关的拓扑相变的实验证据
机译:分子束外延在超薄MgO改性的α-Al_2O_3(0001)衬底上生长Cu_2O(111)单晶膜
机译:通过等离子体辅助分子束外延在Si(111)衬底上的单晶ZnO膜的生长
机译:通过分子束外延优化在(111)砷化镓和(111)磷化铟衬底上的生长。
机译:Si(111)衬底上III-V型化合物的二维拓扑绝缘体薄膜的预计生长
机译:由于拓扑绝缘子Bi $ _ {2} $ Te $ _ {3} $通过分子束外延在Si(111)上生长的薄膜中的表面台阶而导致的畴形成