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Giant magnetoresistance in an electrochemically synthesized regimented array of nickel quantum dots

机译:镍量子点电化学合成规整阵列中的巨磁阻

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Giant magnetoresistance (GMR) due to remote spin dependent scattering of electrons has been observed in an electrochemically synthesized structure consisting of a two-dimensional, quasi-periodic array of nickel dots (diameter ~100 A) overlayed with a thin copper layer. Current flows exclusively in the copper layer, but the electrons scatter from the magnetic moments on the remote, underlying nickel quantum dots. Since the scattering cross-section depends on the magnetization of the dots, the resistance of the structure can be altered with a magnetic field which then gives rise to the GMR. The magnetoresistance is about 3% of the zero-field resistance up to a magnetic flux density of 2 tesla at room temperature.
机译:在电化学合成的结构中,观察到由于电子的远距离自旋相关散射而导致的巨磁阻(GMR),该结构由二维准周期排列的镍点(直径〜100 A)覆盖着薄铜层组成。电流仅在铜层中流动,但电子从远处的下方镍量子点上的磁矩散射。由于散射截面取决于点的磁化强度,因此可以通过磁场改变结构的电阻,从而产生GMR。在室温下,磁通电阻约为零磁场电阻的3%,直到磁通密度为2 tesla。

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