...
机译:研究不同的生长停顿对InAs / GaAs量子点异质结构的结构和光学性质的影响
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076,Maharashtra, India;
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076,Maharashtra, India;
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai-400076,Maharashtra, India;
Department of Chemical Engineering and Materials Science, University of California-Davis, 1153 Kemper Hall, One Shields Avenue,Davis, CA 95616, USA;
Department of Chemical Engineering and Materials Science, University of California-Davis, 1153 Kemper Hall, One Shields Avenue,Davis, CA 95616, USA;
Department of Chemical Engineering and Materials Science, University of California-Davis, 1153 Kemper Hall, One Shields Avenue,Davis, CA 95616, USA;
growth pause; ripening; InAs/GaAs quantum dots; MBE;
机译:异位退火对四元合金(InAlGaAs)封盖的InAs / GaAs量子点异质结构的影响,随着生长速率,势垒厚度和种子量子点单层覆盖率的变化,优化了光电和结构性能
机译:InAs / GaAs量子点异质结构中生长暂停诱导成熟的影响的温度依赖性光致发光研究
机译:分子束外延生长的InGaAsN量子阱中具有InAs量子点的异质结构的结构和光学性质
机译:应变耦合多堆叠InAs / GaAs量子点异质结构中点层数目变化的影响的详细研究
机译:InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
机译:GaAsBi基体对InAs量子点光学和结构性质的影响
机译:红外光电探测器量子阱多层结构中InAs / InGaAs / GaAs量子点的光学性质研究