The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters

摘要

Two different sets of structural parameters are used to fabricate InGaN/GaN multiple quantum well (MQW) green light-emitting diodes (LEDs) which have nearly the same light emission wavelength. It is found that, compared with the thin-well but high-in-content MQW LED, the efficiency droop of InGaN LED with the thick-well but low-in-content MQWs is less significant. Such reduction of droop may be attributed to the less electron overflowing, larger volume of active region and weaker delocalization effect, induced by the thicker well layers and lower In content in the latter.