Study of strained-Si p-channel MOSFETs with HfO_2 gate dielectric

摘要

In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO_2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO_2/strained-Si p-MOSFET device. Peak trans-conductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO_2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO_2.