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The investigation of thermal properties on multilayer Sb_2Te_3/Au thermoelectric material system with ultra-thin Au interlayers

机译:具有超薄Au中间层的多层Sb_2Te_3 / Au热电材料系统的热性能研究

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摘要

The manipulation of heat transport across multilayer thin films with metal-semicounductor interfaces is of great interest for thermoelectric material optimization. Here we fabricated Sb_2Te_3/Au multilayer films with different Au thickness by magnetron sputtering. We demonstrated that the thermal conductivity of the system can be facilely manipulated by simply changing the Au layer thickness, where an optimal thickness (5 nm) value exists with the lowest thermal conductivity (~0.44 Wm~(-1)K~(-1), 44% of the pure Sb_2Te_3 thin film thermal conductivity). It has been proved that the decreased thermal conductivity was mainly attributed to the strong electron-phonon coupling in a metal-nonmetal multilayered system with Au layer thickness larger than 5 nm, where the Two Temperature Model (ITM) predicts the experimental data perfectly. It was also proposed that the grain boundary effect may dominiate the phonon scattering when the Au layer is in a discountinuous form (<5 nm).
机译:对于热电材料的优化,利用金属-半球形介电常数界面操纵跨多层薄膜的传热非常重要。在这里,我们通过磁控溅射制备了具有不同Au厚度的Sb_2Te_3 / Au多层膜。我们证明了通过简单地改变Au层厚度即可轻松地控制系统的热导率,其中存在最佳厚度(5 nm)值且最低热导率(〜0.44 Wm〜(-1)K〜(-1) ),纯Sb_2Te_3薄膜导热系数的44%)。业已证明,热导率的下降主要归因于金-金属层厚度大于5 nm的金属-非金属多层体系中的强电子-声子耦合,其中两个温度模型(ITM)可以完美地预测实验数据。还提出了当金层为非连续形式(<5 nm)时,晶界效应可以减小声子的散射。

著录项

  • 来源
    《Superlattices and microstructures》 |2016年第1期|312-318|共7页
  • 作者单位

    School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China,Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444, China;

    Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444, China,Department of Physics, Shanghai University, Shanghai 200444, China;

    National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, Shanghai Jiao Jong University, Shanghai 200240, China;

    School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China,Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444, China;

    School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China,Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444, China;

    Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444, China,Department of Physics, Shanghai University, Shanghai 200444, China;

    Institute of NanoMicroEnergy, Shanghai University, Shanghai 200444, China,Department of Physics, Shanghai University, Shanghai 200444, China,National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano Electronics, Shanghai Jiao Jong University, Shanghai 200240, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Thermoelectric materials; Multilayers; Antimony telluride; Electron-phonon coupling; Sieve model;

    机译:热电材料;多层;碲化锑;电子-声子耦合;筛型号;

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