Optical properties of gapped graphene structure in the presence of electron-phonon interaction: A full band approach

摘要

We compute the optical conductivity of gapped graphene taking into account the effects of interaction between electrons and Einstein phonons beyond the usual Dirac-cone approximation. Our study is based on the Kubo formula that is established upon the retarded self-energy. Specially we report the frequency dependence of optical absorption of the structure. We find numerical results for frequency dependence of optical absorption for different values of gap parameter in the presence of Holstein phonons. We have also studied the effects of electron-phonon coupling strength and electronic concentration on the behavior of optical absorption of the gapped graphene structure. Our results show the increase of electronic chemical potential in doped case leads to appear optical band gap in the structure. This optical gap arises from Pauli blocking of vertical transitions when conduction band is doped. Electron-phonon coupling broadens the peak in the optical spectral and decreases the intensity of optical absorption. However the frequency position of the peak is not considerably affected by electron-phonon coupling.