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机译:功函数工程在垂直超结器件中的应用
Department of Electronics and Telecommunication Engineering, National Institute of Technology Raipur, Raipur, CG, India;
Department of Electronics and Telecommunication Engineering, National Institute of Technology Raipur, Raipur, CG, India;
Department of Electronics and Telecommunication Engineering, National Institute of Technology Raipur, Raipur, CG, India;
Breakdown voltage; Charge imbalance; Electric field; Specific ON-resistance; Superjunction;
机译:垂直掺杂和极化超结CaN器件的统一模型
机译:传统掺杂pn和自然极化超结器件的垂直GaN性能限制
机译:垂直4H-SIC和2H-GAN超结装置的性能限制
机译:功函数工程变垂直掺杂超结垂直单扩散MOS的设计与性能预测
机译:4H-SIC和2H-GAN垂直超结(SJ)设备的性能限制
机译:将细胞与垂直纳米器件接口:应用和表征
机译:CCm工作下单相pFC应用中600V超结器件的评估