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High quantum efficiency N-structure type-II superlattice mid-wavelength infrared detector with resonant cavity enhanced design

机译:具有共振腔增强设计的高量子效率N结构II型超晶格中波长红外探测器

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摘要

We propose a resonant cavity enhanced (RCE) N-structure type-II superlattice (T2SL) mid-wavelength infrared (MWIR) photodetector which can be used for the detection of methane gas at 3.3 μm. The theoretical analysis of quantum efficiency (QE) shows that the peak QE can be enhanced from 0.45 to 0.80 at 3.3 μm after 12 period AlAso.09Sbo.91/GaSb DBR is introduced to the N-structure T2SL detector and QE exhibits the narrow bandwidth characteristic near the target wavelength. By analyzing the refractive indices of different materials and the reflectance of different DBRs, we also discuss how to determine the component materials of quarter-wavelength DBR reflectors.
机译:我们提出了一种共振腔增强(RCE)N结构II型超晶格(T2SL)中波长红外(MWIR)光电探测器,该探测器可用于检测3.3μm的甲烷气体。量子效率(QE)的理论分析表明,将12个周期的AlAso.09Sbo.91 / GaSb DBR引入N结构T2SL检测器后,在3.3μm处峰的QE可以从0.45提高到0.80目标波长附近的特性。通过分析不同材料的折射率和不同DBR的反射率,我们还讨论了如何确定四分之一波长DBR反射器的组成材料。

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  • 来源
    《Superlattices and microstructures》 |2017年第5期|28-33|共6页
  • 作者单位

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

    Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    Type-II superlattice; N-structure; Resonant cavity; Photodetector; Quantum efficiency;

    机译:II型超晶格;N结构;谐振腔光电探测器量子效率;

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