Modern comparative approach for carrier transport in InAlN/AlN superlattice device with characteristics and modelling using nitride (~(14)N, ~(15)N) isotopes

摘要

As we all know that, the performance and characteristics of any semiconductor device are effected by change in operating temperature. The temperature dependencies of the transport properties of InAlN/Al~(14)N~(15)N have been investigated using theoretical and mathematical study. Here we have considered the Al~(14)N~(15)N with different ratio of ~(14)N and ~(15)N for the analysis owing to considerable interest in superlattice structures of large band gap semiconductors having various favourable material properties such as very high thermal conductivity, high carrier mobility and wide bandwidth operation. This paper deals with analysis of temperature effect on some of the device modelling parameters like carrier mobility and scattering.