High performance multi-channel MOSFET on InGaAs for RF amplifiers

摘要

In this paper, we propose a multi-channel MOSFET (MC-MOSFET) on Ino.53Gao.47As for the first time by utilising trenches in the conventional planar MOSFET (CP-MOSFET) for RF amplifier applications. The proposed multi-channel MOSFET (MC-MOSFET) has two vertical-gates placed in trenches creating multiple channels in p-body for parallel conduction of drain current. High-k AI_2O_3 having thickness of 2 nm is used as gate dielectric in the proposed device. The TaN gate electrodes are placed in two different trenches in the p-type InGaAs layer where multiple n-channels are formed. Simultaneous conduction from multiple channels enhances the drain current (I_D) and gives higher transconductance (g_m) leading to improvement in overall frequency response. Two-dimensional (2D) numerical simulations of both MC-MOSFET and CP-MOSFET are performed by using ATLAS device simulator and their different performance parameters are compared. The proposed multichannel structure provides 6.79 times higher I_D, 5.57 times improvement in g_m, 2.5 times increase in unity current gain (f_t), 15.85% higher unilateral power gain (f_(max)) and suppress the short-channel effects (SCEs) as compared with the CP-MOSFET.