Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes

摘要

We present a comprehensive approach of designing on-chip inductors using a CMOS-compatible technology on a porous silicon substrate. On-chip inductors realized on standard CMOS technology on bulk silicon suffer from mediocre Q-factor values partly because of the loss created by the Si substrate at higher frequencies, in addition to the metal losses. We examine the alternative of using porous Si as a thick layer isolating the Si substrate from the metallization in an otherwise standard CMOS technology. We present theoretical designs produced with full-wave Method-of-Moments simulations, verified by measurements in standard 0.18 μm CMOS technology using Al metallization. When porous Si is introduced in that technology, the same inductor metallization produced Q-factor enhancements of the order of 50%, compared to the same inductor on bulk crystalline silicon. We also produce optimized single-ended inductor designs using Cu on porous Si, in a 0.13 μm-compatible CMOS technology. The resulting Q-factors are enhanced by a factor of 2 and reach values of 30 or more in the 2-3 GHz frequency range. Even higher quality factors can be obtained in this technology when differential designs are used.