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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A high-speed CMOS dual-phase dynamic-pseudo NMOS ((DP)/sup 2/) latch and its application in a dual-modulus prescaler
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A high-speed CMOS dual-phase dynamic-pseudo NMOS ((DP)/sup 2/) latch and its application in a dual-modulus prescaler

机译:高速CMOS双相动态伪NMOS((DP)/ sup 2 /)锁存器及其在双模预分频器中的应用

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A high speed dual-phase dynamic-pseudo NMOS ((DP)/sup 2/) latch using clocked pseudo-NMOS inverters is presented. Compared to the conventional D-latch, this circuit has a higher maximum operating frequency and consumes lower dynamic power at a given operating frequency. The latch has been demonstrated by utilizing it in the synchronous counter section of a dual-phase dual-modulus prescaler implemented in a 0.8 /spl mu/m CMOS process. The maximum operating frequency for the prescaler at 3 V supply voltage is 1.3 GHz, while the power consumption is 9.7 mW. This power consumption is significantly lower than those of the previously reported prescalers implemented in 0.8 /spl mu/m CMOS processes. The 9.7 mW power consumption at 1.3 GHz also compares favorably to the 24 mW power consumption of the 1.75 GHz prescaler using MOS current mode latches implemented in a 0.7 /spl mu/m CMOS process. A 25% reduction of the maximum operating frequency for a /spl sim/60% reduction of the power consumption should be a useful tradeoff.
机译:提出了一种使用时钟伪NMOS反相器的高速双相动态伪NMOS((DP)/ sup 2 /)锁存器。与传统的D锁存器相比,该电路具有较高的最大工作频率,并且在给定的工作频率下消耗较低的动态功率。通过在以0.8 / spl mu / m CMOS工艺实现的双相双模预分频器的同步计数器部分中使用锁存器,已演示了该锁存器。预分频器在3 V电源电压下的最大工作频率为1.3 GHz,而功耗为9.7 mW。该功耗大大低于先前报告的以0.8 / spl mu / m CMOS工艺实现的预分频器。在1.3 GHz时的9.7 mW功耗也比在0.7 / spl mu / m CMOS工艺中使用MOS电流模式锁存器的1.75 GHz预分频器的24 mW功耗优越。 / spl sim /功耗降低60%时,最大工作频率降低25%应该是一个有用的权衡。

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