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ΣHigh-frequency LC VCO design using capacitive degeneration

机译:Σ采用电容性退化的高频LC VCO设计

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In this paper, we evaluate the high-frequency performance limitations of traditional LC voltage-controlled oscillators (VCOs) that use a cross-coupled negative resistance cell and propose a new topology that overcomes these limitations. The proposed cell is based on a capacitively emitter degenerated topology which uses a cross-coupled MOS pair as the degeneration cell. The cross-coupled MOS pair contributes additional conductance and results in a higher maximum attainable oscillation frequency and better negative resistance characteristics as compared to the other topologies at high frequencies. These properties combined with its small effective capacitance enable low-power low-noise high-frequency VCO implementations. The proposed topology is demonstrated through a 20-GHz fully integrated LC VCO implemented in the IBM SiGe 0.25-Μm BiCMOS process. A comparison of its figure of merit with previously reported 20-GHz VCOs shows the effectiveness of the proposed topology.
机译:在本文中,我们评估了使用交叉耦合负电阻单元的传统LC压控振荡器(VCO)的高频性能限制,并提出了克服这些限制的新拓扑。所提出的单元基于电容性发射极退化拓扑,该拓扑使用交叉耦合的MOS对作为退化单元。与高频下的其他拓扑相比,交叉耦合的MOS对提供了额外的电导,并导致更高的最大可达到的振荡频率和更好的负电阻特性。这些特性加上有效的小电容,可实现低功耗,低噪声的高频VCO。通过在IBM SiGe 0.25μmBiCMOS工艺中实现的20 GHz完全集成LC VCO演示了建议的拓扑。将其品质因数与先前报告的20 GHz VCO进行比较,可以证明所提出拓扑的有效性。

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