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首页> 外文期刊>IEEE Journal of Solid-State Circuits >An 80-Gb/s 2{sup}31 - 1 Pseudorandom Binary Sequence Generator in SiGe BiCMOS Technology
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An 80-Gb/s 2{sup}31 - 1 Pseudorandom Binary Sequence Generator in SiGe BiCMOS Technology

机译:采用SiGe BiCMOS技术的80 Gb / s 2 {sup} 31-1伪随机二进制序列发生器

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A 2{sup}31 - 1 pseudorandom binary sequence (PRBS) generator with adjustable output data rates up to 80 Gb/s is reported in a production 130-nm BiCMOS process with 150-GHz f{sub}T SiGe heterojunction bipolar transistor (HBT). The pseudorandom sequence is generated at 20 Gb/s using a linear feedback shift register (FSR), which is then multiplexed up to 80 Gb/s with a 4:1 multiplexer. A BiCMOS logic family combining MOSFETs and SiGe HBTs on high-speed paths is employed throughout the PRBS generator to maximize building block switching speed. Adjustable delay cells are inserted into critical clock paths to improve timing margins throughout the system. The PRBS generator consumes 9.8 W from a 3.3-V supply and can deliver an output voltage swing of up to 430 mV single-ended at 80 Gb/s.
机译:据报道,在生产150nm f {sub} T SiGe异质结双极晶体管的130nm BiCMOS工艺中,具有高达80 Gb / s可调输出数据速率的2 {sup} 31-1伪随机二进制序列(PRBS)发生器( HBT)。使用线性反馈移位寄存器(FSR)以20 Gb / s的速度生成伪随机序列,然后使用4:1多路复用器将其多路复用至80 Gb / s。在整个PRBS生成器中,采用了在高速路径上结合了MOSFET和SiGe HBT的BiCMOS逻辑系列,以最大化构建模块的开关速度。可调延迟单元被插入关键时钟路径,以改善整个系统的时序裕度。 PRBS发生器从3.3V电源消耗9.8W的功率,并能以80 Gb / s的速率提供高达430mV的单端输出电压摆幅。

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