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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Breakdown Voltage Multiplier for High Voltage Swing Drivers
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A Breakdown Voltage Multiplier for High Voltage Swing Drivers

机译:高压摆幅驱动器的击穿电压倍增器

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摘要

A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s optical modulator driver with a differential output voltage swing of 8V on a 50 Omega load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector-emitter breakdown voltage without stressing any single transistor
机译:引入了一种新颖的击穿电压(BV)倍增器,它使得使用低击穿电压的晶体管产生高输出摆幅成为可能。该阶段的时序分析用于优化其动态响应。在SiGe BiCMOS工艺中实现了10 Gb / s的光调制器驱动器,在50Ω负载下具有8V的差分输出电压摆幅。它使用BV-Doubler拓扑结构,使输出摆幅达到集电极-发射极击穿电压的两倍,而不会给单个晶体管造成压力

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