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A 72 dB-DR 465 MHz-BW Continuous-Time 1-2 MASH ADC in 28 nm CMOS

机译:一个采用28 nm CMOS的72 dB-DR 465 MHz-BW连续时间1-2 MASH ADC

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This paper presents a continuous-time (CT) multi-stage noise-shaping (MASH) ADC in 28 nm CMOS. The MASH ADC uses a first-order front-end stage to digitize the input signal and a second-order back-end stage to digitize the quantization noise of the coarse flash ADC inside the front-end. An RC lattice filter and a current-steering DAC are utilized to extract the front-end coarse quantization residue. The prototype MASH ADC chip built in a 28 nm CMOS process is clocked at 8 GHz with an OSR of 8.6, providing a signal bandwidth of 465 MHz. The ADC achieves a DR of 72 dB and an average small-signal NSD of −160 dBFS/Hz. The peak SNR is 68 dB and the peak SNDR is 67 dB. The IM3 is −88 dBFS with two −9 dBFS tones at the band edge. The ADC consumes 890 mW of power from +1.8/1.0/-1.0 V supplies and achieves a thermal noise FOM of 159 dB.
机译:本文介绍了采用28 nm CMOS的连续时间(CT)多级噪声整形(MASH)ADC。 MASH ADC使用一阶前端级将输入信号数字化,并使用二阶后端级将前端内部粗略Flash ADC的量化噪声数字化。 RC晶格滤波器和电流控制DAC用于提取前端粗量化残差。内置28 nm CMOS工艺的MASH ADC原型芯片的时钟频率为8 GHz,OSR为8.6,提供465 MHz的信号带宽。 ADC的DR为72 dB,平均小信号NSD为-160 dBFS / Hz。峰值SNR为68 dB,峰值SNDR为67 dB。 IM3为−88 dBFS,在频带边缘有两个−9 dBFS音调。 ADC从+ 1.8 / 1.0 / -1.0 V电源消耗890 mW的功率,并实现159 dB的热噪声FOM。

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