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Comments on 'A compact thermal noise model for the investigation of soft error rates in MOS VLSI digital circuits'

机译:关于“用于研究MOS VLSI数字电路中软错误率的紧凑型热噪声模型”的评论

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For the original article see ibid., vol.24, no.1, p.78-89 (1989). In the above-title paper by P.D. Layman and S.G. Chamberlain, the mean-square noise voltage of a MOSFET transistor was determined in the frequency range Delta f=2.2/(2 pi t/sub sen/)=0.35(1/t/sub sen/), whereas the mean-square value (and consequently the RMS) of thermal noise in the RC circuit was determined over an infinite frequency range. The commenter examines the implications of this approach to draw attention to a few questions that can significantly influence the accuracy of results in the course of consideration of noise in electronic circuits.
机译:原文请参见同上,第24卷,第1期,第78-89页(1989)。在以上标题为P.D.的论文中Layman和SG Chamberlain在Delta f = 2.2 /(2 pi t / sub sen /)= 0.35(1 / t / sub sen /)的频率范围内确定了MOSFET晶体管的均方噪声电压在无限频率范围内确定RC电路中热噪声的均方根值(以及RMS)。评论者检查了此方法的含义,以引起人们对一些问题的注意,这些问题在考虑电子电路中的噪声的过程中会严重影响结果的准确性。

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