Multi-Step Word-Line Control Technology in Hierarchical Cell Architecture for Scaled-Down High-Density SRAMs

摘要

A multi-step word-line control technology (MWC), combined with a new hierarchical cell SRAM architecture (HCA), has been developed to overcome rapid increase in random variability with no area penalty. A 40-nm-node 0.248-$mu$m $^{2}$-cell SRAM using a single power supply has been successfully fabricated, pushing up bit density to 2.98 Mb/mm$^{2}$. MWC improved VDD${_}$min@-6$sigma$ by 0.34 V and 0.22 V for read and write operations, respectively, enabling stable 1.0 V operations. Four nanosecond SRAM access time is achieved by adopting HCA, which cancels out a 1.4 ns increase of access delay caused by MWC.