A 220-MHz pipelined 16-Mb BiCMOS SRAM with PLL proportional self-timing generator

摘要

This 512 Kw/spl times/8 b/spl times/3 way synchronous BiCMOS SRAM uses a 2-stage wave-pipeline scheme, a PLL self-timing generator and a 0.4-/spl mu/m BiCMOS process to achieve 220 MHz fully-random read/write operations with a GTL I/O interface. Newly developed circuit technologies include: 1) a zig-zag double word-line scheme, 2) a centered bit-line load layout scheme, and 3) a phase-locked-loop (PLL) with a multistage-tapped ring oscillator which generates a clock cycle proportional pulse (CCPP) and a clock edge lookahead pulse (CELP).