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A 220 MHz pipelined 16 Mb BiCMOS SRAM with PLL proportional self-timing generator

机译:具有PLL比例自定时发生器的220 MHz流水线16 Mb BiCMOS SRAM

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This 512 kw/spl times/8 b/spl times/4 way synchronous BiCMOS SRAM uses a 2-stage wave-pipeline scheme, a PLL self-timing generator, and a 0.4 /spl mu/m BiCMOS process to achieve 220 MHz fully-random read/write operations with a GTL I/O interface. Circuit approaches include 1) zigzag double word-line, 2) centralized bit-line load layout, and 3) phase-locked-loop (PLL) with a multi-stage-tapped (MST) ring oscillator that generates not only a de-skewed internal clock, but also a clock-cycle-proportional pulse and a clock-edge-lookahead pulse.
机译:这款512 kw / spl times / 8 b / spl times / 4方式同步BiCMOS SRAM使用2级波形设计,PLL自定时发生器和0.4 / spl mu / m BiCMOS工艺来完全达到220 MHz使用GTL I / O接口的-random读/写操作。电路方法包括:1)锯齿形双字线,2)集中式位线负载布局,以及3)具有多级抽头(MST)环形振荡器的锁相环(PLL),该振荡器不仅产生去耦信号,偏斜的内部时钟,还有时钟周期比例脉冲和时钟边沿超前脉冲。

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