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PHOTOVOLTAIC PROPERTIES OF CLOSE-SPACE SUBLIMATED CdTe SOLAR CELLS

机译:近空间升华的CdTe太阳能电池的光伏特性

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CdS/CdTe solar cells were fabricated by close-space sublimation with a screen-printed Te-rich CdTe source and their photovoltaic properties were investigated by varying the substrate temperature, cell area, and thicknesses of CdTe and ITO layers. The resistivity of CdTe layers employed in this study was 3 x 10~4 Ω cm. The optimum substrate temperature and thickness for CdTe deposition were 600℃ and 5 μm, respectively. The CdTe bulk resistance degraded the cell performance above 6μm. As the cell area increased the V_(oc) remained almost constant, while the J_(sc) and FF were strongly degraded because of the increase of the lateral resistance pf the ITO layer. The optimum thickness of the ITO layer in this study was 300-450 nm. In this experiment we obtained an efficiency of 9.4% in the 0.5 cm~2 cells. The series resistance of the cell should be further reduced to increase the fill factor and improve the efficiency.
机译:通过使用丝网印刷的富含Te的CdTe源进行近距离升华来制造CdS / CdTe太阳能电池,并通过改变基板温度,电池面积以及CdTe和ITO层的厚度来研究其光伏性能。本研究中使用的CdTe层的电阻率为3 x 10〜4Ωcm。 CdTe沉积的最佳衬底温度和厚度分别为600℃和5μm。 CdTe体电阻超过6μm会使电池性能下降。随着单元面积的增加,V_(oc)几乎保持恒定,而J_(sc)和FF由于ITO层的横向电阻的增加而大大降低。在这项研究中,ITO层的最佳厚度为300-450 nm。在本实验中,我们在0.5 cm〜2的电池中获得了9.4%的效率。电池的串联电阻应进一步降低,以增加填充系数并提高效率。

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