Microwave assisted synthesis of SnS nanosheets for fabrication of large area SnS/Si heterojunction

摘要

Graphene like 2D-semiconductors of IV-VI group have captivated widespread attention in the field of optoelectronics due to their high earth abundant and distinct physical properties. Herein, we report the green synthesis of approach for 2D-SnS nanosheets by microwave assisted solvothermal process. Easy, rapid and high-yield synthesis process produced phase pure and crystalline graphene like SnS nanosheets. Subsequently, highly stable and large area photodetector based on 2D-SnS/3D-Si has been fabricated. Photodetector has shown obvious current rectifying behaviour with ideality factor of 1.4. Owing strong light matter interaction in 2D-SnS, photodetector has demonstrated highly reproducible photoresponse in broad spectral range and fast photoswitching action with response time of 150 ms. Encouragingly, photodetector has shown excellent optoelectronic stability for prolonged illumination for more than 3500 s and reproducible photoswitching for 200 cycles of periodic illumination. Overall, present finding advocates potential in fabrication of high-performance opto-electronics through green synthesis approach.