${rm Ga}_{2}{rm O}_{3}$/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

摘要

$beta{-}{rm Ga}_{2}{rm O}_{3}$/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a ${-}{rm 1}~{rm V}$ applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a ${-}{rm 10}~{rm V}$ applied bias is 247.9.