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A Smart High Accuracy Calibration Algorithm for 3-D Piezoresistive Stress Sensor

机译:3-D压阻式应力传感器的智能高精度校准算法

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Numerical and experimental sensitivity analyses in this paper indicate that the accuracy of a silicon multi-element piezoresistive (PR) stress sensor can be dramatically influenced by the microfabrication non-uniformity and the uncertainties in the values of the PR coefficients and the thermal coefficient of resistance (TCR). The results showed that errors as large as 70% FS or more, in the extracted stress values, may be obtained due to uncertainty of about 2.5% in the values of PR coefficients. This paper aims to evaluate the capabilities of the artificial neural network (ANN) to eliminate the error in stress measurement, due to the fabrication non-uniformity within wafer, wafer-to-wafer, and batch-to-batch, for multi-element PR sensing rosettes. In this paper, sensing chips from two different batches were integrated in building the ANN and testing its performance. The proposed calibration technique employs the neural network fitting Toolbox in MATLAB to generate a two-layer feed-forward network, with sigmoid hidden neurons and linear output neurons. Three different configurations of calibration were designed to test the generalization abilities of the ANN in capturing the in-plane stress components exerted on the silicon chip. The results showed that ANN is capable of accurately predicting the stresses applied to the sensing chip with maximum stress error of 1.5% FS with no need for individual, expensive, and time-consuming calibration process for each sensor.
机译:本文的数值和实验灵敏度分析表明,微细加工的不均匀性以及PR系数和电阻热系数的不确定性会严重影响硅多元素压阻(PR)应力传感器的精度。 (TCR)。结果表明,由于PR系数值的不确定性约为2.5%,因此在提取的应力值中可获得高达70%FS或更大的误差。本文旨在评估人工神经网络(ANN)消除应力测量误差的能力,这种误差是由于晶圆,晶圆对晶圆和批次对批次的制造不均匀性而导致的多元素公关感应花环。在本文中,集成了两个不同批次的传感芯片,以构建ANN并测试其性能。所提出的校准技术利用MATLAB中的神经网络拟合工具箱来生成两层前馈网络,该网络具有S形隐藏神经元和线性输出神经元。设计了三种不同的校准配置,以测试ANN在捕获施加在硅芯片上的面内应力分量时的概括能力。结果表明,ANN能够以1.5%FS的最大应力误差准确预测施加到传感芯片上的应力,而无需为每个传感器进行单独,昂贵且耗时的校准过程。

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