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Metal-coated silicon micropillars for freestanding 3D-electrode arrays in microchannels

机译:用于微通道中独立式3D电极阵列的金属涂层硅微柱

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摘要

This paper presents a fabrication process for arrays of high-aspect-ratio micropillar electrodes, which are freestanding 3D structures that feature metal sidewalls connected to passivated planar wires. Facing vertical electrodes are considered to be a key solution in microdevice technologies, as they are able to improve the efficiency and accuracy of electrical methods by generating homogeneous electric fields along the height of microfluidic channels. Despite the acknowledged advantages of using vertical micro-electrodes, current microfabrication technologies do not allow the manufacture of such structures with the same resolution and versatility as planar electrodes. The present study focused on the fabrication of round and square-shaped silicon pillar arrays exposing metal on their sidewalls, which is decoupled from the substrate by means of a passivation layer. The pillars range in width from 10μm to 70μm, with gaps down to 10μm and a maximum aspect ratio of 5:1. Metal deposition and patterning were revealed to be the critical steps of the process. Deposition was achieved by sputtering, while patterning was performed by photolithography, and the photoresist was applied by spray-coating. The pattern was then transferred into the metal layer by means of dry etching. This new process can be adapted to any metal that is suitable for depositing by sputtering and patterning by dry etching. The presence of the metal layer on the vertical sidewalls was confirmed by SEN! imaging combined with EDX analysis. The arrays were then characterized by electrical conductivity measurements and impedance spectroscopy.
机译:本文介绍了高纵横比微柱电极阵列的制造工艺,这些电极是独立式3D结构,其特征在于金属侧壁连接到钝化的平面导线。面对垂直电极被认为是微设备技术中的关键解决方案,因为它们能够通过沿微流通道的高度生成均匀电场来提高电方法的效率和准确性。尽管使用垂直微电极具有公认的优势,但是当前的微细加工技术仍不允许以与平面电极相同的分辨率和通用性来制造这种结构。目前的研究集中在圆形和方形硅柱阵列的制造上,该阵列将金属暴露在其侧壁上,该侧壁通过钝化层与衬底分离。柱子的宽度范围从10μm到70μm,缝隙低至10μm,最大长宽比为5:1。金属沉积和图案化被认为是该工艺的关键步骤。通过溅射进行沉积,同时通过光刻进行图案形成,并且通过喷涂涂覆光致抗蚀剂。然后通过干蚀刻将图案转移到金属层中。这种新工艺可以适用于任何适合通过溅射沉积和通过干蚀刻构图的金属。 SEN证实了在垂直侧壁上金属层的存在。成像与EDX分析相结合。然后通过电导率测量和阻抗谱表征阵列。

著录项

  • 来源
    《Sensors and Actuators》 |2013年第8期|713-719|共7页
  • 作者单位

    Laboratory of Life Sciences Electronics, Ecole Polytechnique Federate de Lausanne (EPFL), 1015 Lausanne, Switzerland;

    Laboratory of Life Sciences Electronics, Ecole Polytechnique Federate de Lausanne (EPFL), 1015 Lausanne, Switzerland;

    Laboratory of Life Sciences Electronics, Ecole Polytechnique Federate de Lausanne (EPFL), 1015 Lausanne, Switzerland,Laboratory of Biological Structure Mechanics, Department of Chemistry, Materials and Chemical Engineering 'Giulio Natta', Politecnico di Milano, 20133 Mitano, Italy;

    Laboratory of Life Sciences Electronics, Ecole Polytechnique Federate de Lausanne (EPFL), 1015 Lausanne, Switzerland;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon microfabrication; 3D electrodes; Microelectrode arrays; Lab-on-a-chip; Cell manipulation and analysis;

    机译:硅微加工;3D电极微电极阵列;芯片实验室;细胞操作与分析;

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