Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor

摘要

temperature-dependent characteristics of an InP/InGaAs superlattice--emitter resonant--tunnelling bipolar transistor have been studied and demonstrated. Due to the use of a five-period InP/InGaAs superlattice, the RT effect is observed at cryogenic temperature. In addition, the temperature--dependent dc characteristics of the studied device from room temperature to 398 K are reported. Dc current gain remains at an approximately constant value over the measured temperature range. The temperature coefficients of base--emitter and base--collector turn--on voltages are - 2 and -3 mV K~-1. respectively. The ideality factors of base current (n_B) and collector current (n_c) exhibit negative temperature coefficients. N_B ≈ 1 indicates that the bulk base recombination current component dominates the whole base current as the temperature is increased.