Comparison of the effects of electron and proton irradiation on type-converted silicon space solar cells upon annealing

摘要

We report here a comparative investigation of type-converted silicon diodes from p to n type of the base layer of an n~+ -p-p~+ structure after irradiation with 1 MeV electrons and 10 MeV protons and subsequently after annealing. The production of a new electron level E_c - 0.71 eV, with high concentration, switches the cell from p type to n type and exhibits a mutual thermal transformation with the hole level E_v + 0.36 eV upon annealing, which can be understood to be due to a change of the charge state of this level and shifting of the Fermi level to the conduction band.