Annealing of Schottky contacts deposited on dry etched AlGaN /GaN

摘要

The influence of annealing on properties of Pt Schottky contacts deposited on the electron cyclotron resonance plasma etched surface of an AlGaN/GaN heterostructure has been investigated. It is found that rapid Thermal annealing (450 deg. C and 40 s in nitrogen gas), performed after metal Deposition, allows for the preparation of Schottky contacts with similar or Better properties than those obtained on a non-etched surface. This Procedure is suitable for the realization of recessed high-quality Schottky Contacts of AlGaN/GaN HEMTs.