GaNAsSb: how does it compare with other dilute III-V-nitride alloys?

摘要

Growth and properties of GaNAsSb alloys are investigated and compared with those of other dilute III-N-V alloys. Similar properties are observed including very high bandgap bowing, carrier localization at low temperature, sensitivity to thermal annealing and passivation of N-related electronic states by hydrogen. On the other hand, we point out some features of this alloy system and evaluate its potential for device applications. Probably, GaNAsSb can achieve emission at longer wavelengths that GaiNAs alloys Grown to date.