首页> 外国专利> Dilute copper alloy material, dilute copper alloy wire, dilute copper alloy twisted wire and cable using the same, coaxial cable and composite cable, and method of manufacturing dilute copper alloy material and dilute copper alloy wire

Dilute copper alloy material, dilute copper alloy wire, dilute copper alloy twisted wire and cable using the same, coaxial cable and composite cable, and method of manufacturing dilute copper alloy material and dilute copper alloy wire

机译:稀铜合金材料,稀铜合金线,稀铜合金双绞线及其使用的电缆,同轴电缆和复合电缆以及稀铜合金材料和稀铜合金线的制造方法

摘要

A dilute copper alloy material includes, based on a total mass of the dilute copper alloy material, 2 to 12 mass ppm of sulfur, 2 to 30 mass ppm of oxygen, 4 to 55 mass ppm of titanium, and a balance of pure copper and inevitable impurity. A part of the sulfur and the titanium forms a compound or an aggregate of TiO, TiO2, TiS or Ti—O—S, and an other part of the sulfur and the titanium forms a solid solution. TiO, TiO2, TiS and Ti—O—S distributed in a crystal grain of the dilute copper alloy material are not more than 200 nm, not more than 1000 nm, not more than 200 nm and not more than 300 nm, respectively, in particle size thereof, and not less than 90% of particles distributed in a crystal grain of the dilute copper alloy material are 500 nm or less in particle size.
机译:基于稀铜合金材料的总质量,稀铜合金材料包括2至12质量ppm的硫,2至30质量ppm的氧,4至55质量ppm的钛以及余量的纯铜和不可避免的杂质。一部分硫和钛形成TiO,TiO 2 ,TiS或Ti-OS的化合物或聚集体,另一部分硫和钛形成固溶体。稀铜合金材料的晶粒中分布的TiO,TiO 2 ,TiS和Ti-O-S不大于200 nm,不大于1000 nm,不大于200 nm和不大于其粒径分别大于或等于300nm,并且分布在稀铜合金材料的晶粒中的不少于90%的粒径小于或等于500nm。

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