Quantum 1/f noise in epitaxial lateral overgrown GaN: piezoelectric effect

摘要

Low-frequency noise has been investigated for epitaxial lateral overgrown (ELO) gallium nitride (ELO-GaN). The noise parameter α evaluated was about 2. The coherent piezoelectric quantum 1/f noise theory was applied to model the experimentally obtained α and excellent correlation was achieved. The high value of αindicates the significant contribution of the piezoelectric interaction and of the transversal acoustic phonon scattering mechanism.